IRF7421D1 diode equivalent, mosfet & schottky diode.
n ctio n C a p a cita n ce - C T (p F )
T J = 2 5 °C
100
10 0 10 20
A
30
R e ve r se Vo lta g e - V R (V )
Fig. 14 - Typical Junction Capacitance Vs. Reverse Voltag.
Generation V Technology SO-8 Footprint
HEXFET ®
FETKY T M
A S S G
1
A A D D D D
2
7
VDSS = 30V RDS(on) = 0.035Ω Sc.
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